Strain and the Optoelectronic Properties of Nonplanar Phosphorene Monolayers

Shows that non-planarity in phosphorene monolayers directly reduces the semiconducting band gap, regardless of allotrope, providing an optical method for detecting local structural defects. The geometric deformation is characterised using discrete differential geometry, and the approach is extended to classify other 2D materials by their crystal geometry.

2015-01-01

Authors: M. Mehboudi, K. Utt, H. Terrones, E. O. Harriss, A. A. Pacheco SanJuan, S. Barraza-Lopez
Published in: Proceedings of the National Academy of Sciences, 2015
Links: DOI

BibTeX

@article{phosphorene-optoelectronic,
  title   = {Strain and the Optoelectronic Properties of Nonplanar Phosphorene Monolayers},
  author  = {M. Mehboudi and K. Utt and H. Terrones and E. O. Harriss and A. A. Pacheco SanJuan and S. Barraza-Lopez},
  journal = {Proceedings of the National Academy of Sciences},
  year    = {2015},
  volume  = {112},
  number  = {19},
  pages   = {5888--5892},
  doi     = {10.1073/pnas.1500633112},
}